A study of the structural and magnetic properties of ZnO implanted by Gd ions

Macková, A.; Mikulics, M.; Šimek, P.; Sedmidubský, D.; Malinský, P.; Sofer, Z.; Wilhelm, R. A.

doi:10.1016/j.nimb.2014.02.034

Journal Article

FZJ-2014-02863

A study of the structural and magnetic properties of ZnO implanted by Gd ions

Macková, A. (Corresponding Author) ; Malinský, P. ; Sofer, Z. ; Šimek, P. ; Sedmidubský, D. ; Mikulics, M.FZJ* ; Wilhelm, R. A.

2014
Elsevier Amsterdam [u.a.]

Nuclear instruments & methods in physics research / B 307, 1-5 (2014) [10.1016/j.nimb.2014.02.034]

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Abstract: GaN layers with 〈0 0 0 1〉 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015–1 × 1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm−2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm−2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.

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