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000153215 0247_ $$2doi$$a10.1016/j.nimb.2014.02.034
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000153215 1001_ $$0P:(DE-HGF)0$$aMacková, A.$$b0$$eCorresponding Author
000153215 245__ $$aA study of the structural and magnetic properties of ZnO implanted by Gd ions
000153215 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2014
000153215 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1398778321_20153
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000153215 520__ $$aGaN layers with 〈0 0 0 1〉 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015–1 × 1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm−2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm−2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
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000153215 7001_ $$0P:(DE-HGF)0$$aMalinský, P.$$b1
000153215 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b2
000153215 7001_ $$0P:(DE-HGF)0$$aŠimek, P.$$b3
000153215 7001_ $$0P:(DE-HGF)0$$aSedmidubský, D.$$b4
000153215 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b5$$ufzj
000153215 7001_ $$0P:(DE-HGF)0$$aWilhelm, R. A.$$b6
000153215 773__ $$0PERI:(DE-600)1466524-4$$a10.1016/j.nimb.2014.02.034$$gp. S0168583X14002912$$p1-5$$tNuclear instruments & methods in physics research / B$$v307$$x0168-583X$$y2014
000153215 8564_ $$uhttp://www.sciencedirect.com/science/article/pii/S0168583X14002912
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000153215 9132_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
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000153215 9141_ $$y2014
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