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@ARTICLE{Mackov:153215,
      author       = {Macková, A. and Malinský, P. and Sofer, Z. and Šimek, P.
                      and Sedmidubský, D. and Mikulics, M. and Wilhelm, R. A.},
      title        = {{A} study of the structural and magnetic properties of
                      {Z}n{O} implanted by {G}d ions},
      journal      = {Nuclear instruments $\&$ methods in physics research / B},
      volume       = {307},
      issn         = {0168-583X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2014-02863},
      pages        = {1-5},
      year         = {2014},
      abstract     = {GaN layers with 〈0 0 0 1〉 crystallographic orientation,
                      grown by low-pressure metal-organic vapour-phase epitaxy
                      (MOVPE) on c-plane sapphire substrates, were implanted with
                      200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies
                      of 1 × 1015–1 × 1016 cm−2. The composition of the
                      ion-implanted layers and concentration profiles of the
                      implanted atoms were studied by Rutherford Back-Scattering
                      spectrometry (RBS). The profiles were compared to SRIM 2008
                      simulations. The structural properties of the ion-implanted
                      layers were characterised by RBS-channelling and Raman
                      spectroscopy. Changes in the surface morphology caused by
                      the ion implantation were examined by Atomic Force
                      Microscopy (AFM). A structural analysis showed a high
                      disorder of the atoms close to the amorphised structure at
                      the surface layer above an implantation fluence of 5 × 1015
                      cm−2 while lower disorder density was observed in the bulk
                      according to the projected range of 400 keV ions. The
                      post-implantation annealing induced significant changes only
                      in the Sm and Eu depth profiles; a diffusion of rare-earths
                      implanted at a fluence of 5 × 1015 cm−2 to the surface
                      was observed. The annealing caused the reconstruction of the
                      surface layer accompanied by surface-roughness enhancement.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000339131200018},
      doi          = {10.1016/j.nimb.2014.02.034},
      url          = {https://juser.fz-juelich.de/record/153215},
}