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024 7 _ |a 10.1016/j.nimb.2014.02.034
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037 _ _ |a FZJ-2014-02863
082 _ _ |a 530
100 1 _ |a Macková, A.
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245 _ _ |a A study of the structural and magnetic properties of ZnO implanted by Gd ions
260 _ _ |a Amsterdam [u.a.]
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336 7 _ |a Journal Article
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520 _ _ |a GaN layers with 〈0 0 0 1〉 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015–1 × 1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm−2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm−2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
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700 1 _ |a Malinský, P.
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700 1 _ |a Sofer, Z.
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700 1 _ |a Šimek, P.
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700 1 _ |a Sedmidubský, D.
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700 1 _ |a Mikulics, M.
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700 1 _ |a Wilhelm, R. A.
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773 _ _ |a 10.1016/j.nimb.2014.02.034
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856 4 _ |u http://www.sciencedirect.com/science/article/pii/S0168583X14002912
856 4 _ |u https://juser.fz-juelich.de/record/153215/files/FZJ-2014-02863.pdf
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