Hauptseite > Publikationsdatenbank > A study of the structural and magnetic properties of ZnO implanted by Gd ions > print |
001 | 153215 | ||
005 | 20210129213702.0 | ||
024 | 7 | _ | |a 10.1016/j.nimb.2014.02.034 |2 doi |
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024 | 7 | _ | |a 1872-9584 |2 ISSN |
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037 | _ | _ | |a FZJ-2014-02863 |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Macková, A. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
245 | _ | _ | |a A study of the structural and magnetic properties of ZnO implanted by Gd ions |
260 | _ | _ | |a Amsterdam [u.a.] |c 2014 |b Elsevier |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1398778321_20153 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a article |2 DRIVER |
520 | _ | _ | |a GaN layers with 〈0 0 0 1〉 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015–1 × 1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm−2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm−2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement. |
536 | _ | _ | |a 422 - Spin-based and quantum information (POF2-422) |0 G:(DE-HGF)POF2-422 |c POF2-422 |f POF II |x 0 |
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700 | 1 | _ | |a Malinský, P. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Sofer, Z. |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Šimek, P. |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Sedmidubský, D. |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Mikulics, M. |0 P:(DE-Juel1)128613 |b 5 |u fzj |
700 | 1 | _ | |a Wilhelm, R. A. |0 P:(DE-HGF)0 |b 6 |
773 | _ | _ | |a 10.1016/j.nimb.2014.02.034 |g p. S0168583X14002912 |0 PERI:(DE-600)1466524-4 |p 1-5 |t Nuclear instruments & methods in physics research / B |v 307 |y 2014 |x 0168-583X |
856 | 4 | _ | |u http://www.sciencedirect.com/science/article/pii/S0168583X14002912 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/153215/files/FZJ-2014-02863.pdf |z Published final document. |y Restricted |
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910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128613 |
913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-522 |2 G:(DE-HGF)POF3-500 |v Controlling Spin-Based Phenomena |x 0 |
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914 | 1 | _ | |y 2014 |
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