%0 Conference Paper
%A Fox, A.
%A Mikulics, M.
%A Winden, A.
%A Hardtdegen, H.
%A Gregusova, D.
%A Adam, Roman
%A Sobolewski, R.
%A Marso, M.
%A Grutzmacher, D.
%A Kordos, P.
%T Towards future III-nitride based THz OEICs in the UV range
%I IEEE
%M FZJ-2014-02938
%P 191,194
%D 2012
%< The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418570
%X A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE.
%B 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
%C 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2 11 Nov 2012 - 15 Nov 2012
M2 Smolenice, Slovakia
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ASDAM.2012.6418570
%U https://juser.fz-juelich.de/record/153295