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000153295 1001_ $$0P:(DE-Juel1)125583$$aFox, A.$$b0$$eCorresponding Author$$ufzj
000153295 1112_ $$a2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2012-11-11 - 2012-11-15$$wSlovakia
000153295 245__ $$aTowards future III-nitride based THz OEICs in the UV range
000153295 260__ $$bIEEE$$c2012
000153295 29510 $$aThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418570
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000153295 520__ $$aA group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE.
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000153295 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$ufzj
000153295 7001_ $$0P:(DE-Juel1)144014$$aWinden, A.$$b2$$ufzj
000153295 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b3$$ufzj
000153295 7001_ $$0P:(DE-HGF)0$$aGregusova, D.$$b4
000153295 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b5$$ufzj
000153295 7001_ $$0P:(DE-HGF)0$$aSobolewski, R.$$b6
000153295 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b7
000153295 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b8$$ufzj
000153295 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b9
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