TY  - CONF
AU  - Fox, A.
AU  - Mikulics, M.
AU  - Winden, A.
AU  - Hardtdegen, H.
AU  - Gregusova, D.
AU  - Adam, Roman
AU  - Sobolewski, R.
AU  - Marso, M.
AU  - Grutzmacher, D.
AU  - Kordos, P.
TI  - Towards future III-nitride based THz OEICs in the UV range
PB  - IEEE
M1  - FZJ-2014-02938
SP  - 191,194
PY  - 2012
AB  - A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE.
T2  - 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
CY  - 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2  - 11 Nov 2012 - 15 Nov 2012
M2  - Smolenice, Slovakia
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ASDAM.2012.6418570
UR  - https://juser.fz-juelich.de/record/153295
ER  -