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@INPROCEEDINGS{Fox:153295,
      author       = {Fox, A. and Mikulics, M. and Winden, A. and Hardtdegen, H.
                      and Gregusova, D. and Adam, Roman and Sobolewski, R. and
                      Marso, M. and Grutzmacher, D. and Kordos, P.},
      title        = {{T}owards future {III}-nitride based {TH}z {OEIC}s in the
                      {UV} range},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-02938},
      pages        = {191,194},
      year         = {2012},
      comment      = {The Ninth International Conference on Advanced
                      Semiconductor Devices and Mircosystems : [Proceedings] -
                      IEEE, 2012. - ISBN
                      978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 -
                      doi:10.1109/ASDAM.2012.6418570},
      booktitle     = {The Ninth International Conference on
                       Advanced Semiconductor Devices and
                       Mircosystems : [Proceedings] - IEEE,
                       2012. - ISBN
                       978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0
                       - doi:10.1109/ASDAM.2012.6418570},
      abstract     = {A group III-nitride based MSM photodetector integrated with
                      a MESFET in an OEIC circuit is presented exhibiting an
                      exceptionally high 3 dB-bandwidth of 410 GHz. Advances
                      towards circuit improvement by the future implementation of
                      a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is
                      used directly on the processed device to optimize processing
                      with respect to processing related strain and damage
                      effects. It is demonstrated that μ-PL allows insight into
                      device and material optimization which are the strategic key
                      to improved future III-nitride based UV-optoelectronic
                      integrated circuits (OEIC) operated up to the THz range. ©
                      2012 IEEE.},
      month         = {Nov},
      date          = {2012-11-11},
      organization  = {2012 International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 11 Nov 2012 - 15 Nov 2012},
      cin          = {PGI-9 / PGI-6 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ASDAM.2012.6418570},
      url          = {https://juser.fz-juelich.de/record/153295},
}