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| Hauptseite > Publikationsdatenbank > Towards future III-nitride based THz OEICs in the UV range > print |
| Hauptseite > Publikationsdatenbank > Towards future III-nitride based THz OEICs in the UV range > print |
| 001 | 153295 | ||
| 005 | 20210129213720.0 | ||
| 024 | 7 | _ | |a 10.1109/ASDAM.2012.6418570 |2 doi |
| 037 | _ | _ | |a FZJ-2014-02938 |
| 100 | 1 | _ | |a Fox, A. |0 P:(DE-Juel1)125583 |b 0 |e Corresponding Author |u fzj |
| 111 | 2 | _ | |a 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |c Smolenice |d 2012-11-11 - 2012-11-15 |w Slovakia |
| 245 | _ | _ | |a Towards future III-nitride based THz OEICs in the UV range |
| 260 | _ | _ | |c 2012 |b IEEE |
| 295 | 1 | 0 | |a The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418570 |
| 300 | _ | _ | |a 191,194 |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1398776685_20145 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Contribution to a book |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |m contb |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE. |
| 536 | _ | _ | |a 423 - Sensorics and bioinspired systems (POF2-423) |0 G:(DE-HGF)POF2-423 |c POF2-423 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef Conference |
| 700 | 1 | _ | |a Mikulics, M. |0 P:(DE-Juel1)128613 |b 1 |u fzj |
| 700 | 1 | _ | |a Winden, A. |0 P:(DE-Juel1)144014 |b 2 |u fzj |
| 700 | 1 | _ | |a Hardtdegen, H. |0 P:(DE-Juel1)125593 |b 3 |u fzj |
| 700 | 1 | _ | |a Gregusova, D. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Adam, Roman |0 P:(DE-Juel1)130495 |b 5 |u fzj |
| 700 | 1 | _ | |a Sobolewski, R. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Marso, M. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Grutzmacher, D. |0 P:(DE-Juel1)125588 |b 8 |u fzj |
| 700 | 1 | _ | |a Kordos, P. |0 P:(DE-HGF)0 |b 9 |
| 773 | _ | _ | |a 10.1109/ASDAM.2012.6418570 |
| 856 | 4 | _ | |u http://www.scopus.com/record/display.url?eid=2-s2.0-84874151038&origin=resultslist |
| 909 | C | O | |o oai:juser.fz-juelich.de:153295 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)125583 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)128613 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)144014 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)125593 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)130495 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)125588 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-423 |2 G:(DE-HGF)POF2-400 |v Sensorics and bioinspired systems |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |k PGI-6 |l Elektronische Eigenschaften |x 1 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 2 |
| 980 | _ | _ | |a contrib |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a contb |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
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