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| 001 | 153295 | ||
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| 024 | 7 | _ | |a 10.1109/ASDAM.2012.6418570 |2 doi |
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| 100 | 1 | _ | |a Fox, A. |0 P:(DE-Juel1)125583 |b 0 |e Corresponding Author |u fzj |
| 111 | 2 | _ | |a 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |c Smolenice |d 2012-11-11 - 2012-11-15 |w Slovakia |
| 245 | _ | _ | |a Towards future III-nitride based THz OEICs in the UV range |
| 260 | _ | _ | |c 2012 |b IEEE |
| 295 | 1 | 0 | |a The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418570 |
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| 520 | _ | _ | |a A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE. |
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| 700 | 1 | _ | |a Adam, Roman |0 P:(DE-Juel1)130495 |b 5 |u fzj |
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| 773 | _ | _ | |a 10.1109/ASDAM.2012.6418570 |
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