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@ARTICLE{Schfer:153304,
author = {Schäfer, A. and Besmehn, A. and Luysberg, M. and Winden,
A. and Stoica, T. and Schnee, M. and Zander, W. and Niu, G.
and Schroeder, T. and Mantl, S. and Hardtdegen, H. and
Mikulics, M. and Schubert, J.},
title = {{H}exagonal {G}d{S}c{O} 3 : an epitaxial high-κ dielectric
for {G}a{N}},
journal = {Semiconductor science and technology},
volume = {29},
number = {7},
issn = {1361-6641},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2014-02947},
pages = {075005},
year = {2014},
abstract = {GdScO3 was deposited by pulsed laser deposition on two
different templates suitable for III-Ngrowth: metalorganic
vapour phase epitaxial GaN (0 0 0 1) on sapphire and
molecular beamepitaxial Y2O3 on Si (1 1 1). The structure
and crystallinity of the layers were determined aswell as
the band gap and permittivity of the material. It was found
that GdScO3 growsepitaxially and crystallizes hexagonally in
contrast to the usually found orthorhombic oramorphous
phases. A band gap and permittivity κ of 5.2 eV and 24 were
found, respectively,making GdScO3 a promising epitaxial gate
dielectric for III-N transistor applications.},
cin = {PGI-9 / ZEA-3 / PGI-5 / PGI-6 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)PGI-6-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000337356600006},
doi = {10.1088/0268-1242/29/7/075005},
url = {https://juser.fz-juelich.de/record/153304},
}