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@INBOOK{Durini:153887,
author = {Durini, Daniel and Arutinov, David},
title = {{O}perational principles of silicon image sensors},
volume = {60},
address = {UK},
publisher = {Woodhead Publishing Ltd. Elsevier Imprint},
reportid = {FZJ-2014-03361},
isbn = {978-0-85709-598-5},
series = {Woodhead Publishing Series in Electronic and Optical
Materials},
pages = {25 - 77},
year = {2014},
comment = {High Performance Silicon Imaging. Fundamentals and
Applications of CMOS and CCD Image Sensors},
booktitle = {High Performance Silicon Imaging.
Fundamentals and Applications of CMOS
and CCD Image Sensors},
abstract = {This chapter discusses in detail the physics behind the
different silicon based photodetector technologies. It
analyses the challenges and perspectives of silicon based
photosensors with a brief overview of hybrid and 3D sensor
technology.Key words : silicon based phototransduction ,
active pixel architectures, complementary
metal-oxide-semiconductor (CMOS) photosensors, charge
coupled device (CCD), silicon imaging, signal-to-noise ratio
(SNR), hybrid and 3D detector technology.},
cin = {ZEA-2},
cid = {I:(DE-Juel1)ZEA-2-20090406},
pnm = {143 - Radiation Research (POF2-143) / 355 - Ionizing
Radiation: National Center for Radiation Sciences (NCRS)
(POF2-355) / 423 - Sensorics and bioinspired systems
(POF2-423) / 434 - Optics and Photonics (POF2-434) / 472 -
Key Technologies and Innovation Processes (POF2-472) / 541 -
Photons (POF2-541) / 621 - Earth Observation (POF2-621)},
pid = {G:(DE-HGF)POF2-143 / G:(DE-HGF)POF2-355 /
G:(DE-HGF)POF2-423 / G:(DE-HGF)POF2-434 / G:(DE-HGF)POF2-472
/ G:(DE-HGF)POF2-541 / G:(DE-HGF)POF2-621},
typ = {PUB:(DE-HGF)7},
url = {https://juser.fz-juelich.de/record/153887},
}