Contribution to a book

FZJ-2014-03361

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Operational principles of silicon image sensors

Durini, D. (Corresponding Author)FZJ* ; Arutinov, D.

2014
Woodhead Publishing Ltd. Elsevier Imprint UK
ISBN: 978-0-85709-598-5

Abstract: This chapter discusses in detail the physics behind the different silicon based photodetector technologies. It analyses the challenges and perspectives of silicon based photosensors with a brief overview of hybrid and 3D sensor technology.Key words : silicon based phototransduction , active pixel architectures, complementary metal-oxide-semiconductor (CMOS) photosensors, charge coupled device (CCD), silicon imaging, signal-to-noise ratio (SNR), hybrid and 3D detector technology.

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Contributing Institute(s):

1. Zentralinstitut für Elektronik (ZEA-2)

Research Program(s):

1. 143 - Radiation Research (POF2-143) (POF2-143)
2. 355 - Ionizing Radiation: National Center for Radiation Sciences (NCRS) (POF2-355) (POF2-355)
3. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)
4. 434 - Optics and Photonics (POF2-434) (POF2-434)
5. 472 - Key Technologies and Innovation Processes (POF2-472) (POF2-472)
6. 541 - Photons (POF2-541) (POF2-541)
7. 621 - Earth Observation (POF2-621) (POF2-621)

Appears in the scientific report 2014

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