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001     153887
005     20250129092448.0
020 _ _ |a 978-0-85709-598-5
037 _ _ |a FZJ-2014-03361
041 _ _ |a English
100 1 _ |a Durini, Daniel
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245 _ _ |a Operational principles of silicon image sensors
260 _ _ |a UK
|c 2014
|b Woodhead Publishing Ltd. Elsevier Imprint
295 1 0 |a High Performance Silicon Imaging. Fundamentals and Applications of CMOS and CCD Image Sensors
300 _ _ |a 25 - 77
336 7 _ |a Contribution to a book
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490 0 _ |a Woodhead Publishing Series in Electronic and Optical Materials
|v 60
520 _ _ |a This chapter discusses in detail the physics behind the different silicon based photodetector technologies. It analyses the challenges and perspectives of silicon based photosensors with a brief overview of hybrid and 3D sensor technology.Key words : silicon based phototransduction , active pixel architectures, complementary metal-oxide-semiconductor (CMOS) photosensors, charge coupled device (CCD), silicon imaging, signal-to-noise ratio (SNR), hybrid and 3D detector technology.
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700 1 _ |a Arutinov, David
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773 _ _ |y 2014
856 4 _ |u http://www.woodheadpublishingonline.com/content/m37v3226w547mw6u/?p=cb203657cbc04b1a8a332c40c7674d74&pi=1
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