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000154207 041__ $$aEnglish
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000154207 1001_ $$0P:(DE-HGF)0$$aHaab, Anna$$b0$$eCorresponding Author
000154207 245__ $$aEvolution and characteristics of GaN nanowires produced via maskless reactive ion etching
000154207 260__ $$aBristol$$bIOP Publ.$$c2014
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000154207 520__ $$aThe formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.
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000154207 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$ufzj
000154207 7001_ $$0P:(DE-HGF)0$$aSutter, Eli$$b2
000154207 7001_ $$0P:(DE-Juel1)136933$$aJin, Jiehong$$b3$$ufzj
000154207 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b4$$ufzj
000154207 7001_ $$0P:(DE-Juel1)145316$$aKardynal, Beata$$b5$$ufzj
000154207 7001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b6$$ufzj
000154207 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b7$$ufzj
000154207 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b8$$ufzj
000154207 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/25/25/255301$$gVol. 25, no. 25, p. 255301 -$$n25$$p255301 -$$tNanotechnology$$v25$$x1361-6528$$y2014
000154207 8564_ $$uhttp://iopscience.iop.org/0957-4484/25/25/255301/article
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