Journal Article

FZJ-2014-03586

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching

Haab, A. (Corresponding Author) ; Mikulics, M.FZJ* ; Sutter, E. ; Jin, J.FZJ* ; Stoica, T.FZJ* ; Kardynal, B.FZJ* ; Rieger, T.FZJ* ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2014
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/25/25/255301

Abstract: The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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