TY  - JOUR
AU  - Haab, Anna
AU  - Mikulics, Martin
AU  - Sutter, Eli
AU  - Jin, Jiehong
AU  - Stoica, Toma
AU  - Kardynal, Beata
AU  - Rieger, Torsten
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching
JO  - Nanotechnology
VL  - 25
IS  - 25
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2014-03586
SP  - 255301 -
PY  - 2014
AB  - The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000337501200006
C6  - pmid:24896155
DO  - DOI:10.1088/0957-4484/25/25/255301
UR  - https://juser.fz-juelich.de/record/154207
ER  -