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@ARTICLE{Haab:154207,
author = {Haab, Anna and Mikulics, Martin and Sutter, Eli and Jin,
Jiehong and Stoica, Toma and Kardynal, Beata and Rieger,
Torsten and Grützmacher, Detlev and Hardtdegen, Hilde},
title = {{E}volution and characteristics of {G}a{N} nanowires
produced via maskless reactive ion etching},
journal = {Nanotechnology},
volume = {25},
number = {25},
issn = {1361-6528},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2014-03586},
pages = {255301 -},
year = {2014},
abstract = {The formation of nanowires (NWs) by reactive ion etching
(RIE) of maskless GaN layers was investigated. The
morphological, structural and optical characteristics of the
NWs were studied and compared to those of the layer they
evolve from. It is shown that the NWs are the result of a
defect selective etching process. The evolution of density
and length with etching time is discussed. Densely packed
NWs with a length of more than 1 μm and a diameter of ∼60
nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The
NWs are predominantly free of threading dislocations and
show an improvement of optical properties compared to their
layer counterpart. The production of NWs via a top down
process on non-masked group III-nitride layers is assessed
to be very promising for photovoltaic applications.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000337501200006},
pubmed = {pmid:24896155},
doi = {10.1088/0957-4484/25/25/255301},
url = {https://juser.fz-juelich.de/record/154207},
}