Conference Presentation (Other)

FZJ-2014-04109

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Metal Organic Chemical Vapour Deposition of monocrystalline Ge1Sb2Te4 (GST) and Sb2Te3

Schuck, M. (Corresponding Author)FZJ* ; Riess, S.FZJ* ; Schreiber, M.FZJ* ; Mussler, G.FZJ* ; Stoica, T.FZJ* ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2014

Abstract: GST is considered as one of the most promising materials for nonvolatile phase-change memories. The phase change between its amorphous and crystalline phase is switched by current pulses of different intensity and duration. For this application the alloys along the GeTe − Sb2Te3 pseudobinary are the most suitable, since they are characterized by fast switching speed and high scalability. Their crystallization characteristics are determined by their composition, which therefore needs to be controlled.Here we present the MOCVD growth of Ge1Sb2Te4 (GST) and Sb2Te3 on Si(111) substrates using triethylantimony (TESb), diethyltelluride (DETe) and digermane as precursors and pure N2 as the carrier gas. A systematic variation of reactor pressure and growth temperature was carried out to obtain crystalline flat layers of only one composition. The deposited material was characterized by means of X-Ray Diffraction, Raman spectroscopy, atomic force and scanning electron microscopy. It was found that at low reactor pressure only 2 alloys were found: Ge1Sb2Te4 (GST) and Sb2Te3.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
2. SYNAPSE - SYnthesis and functionality of chalcogenide NAnostructures for PhaSE change memories (310339) (310339)

Appears in the scientific report 2014

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