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@ARTICLE{DeSouza:155485,
author = {De Souza, R. A. and Gunkel, F. and Hoffmann-Eifert, S. and
Dittmann, R.},
title = {{F}inite-size versus interface-proximity effects in
thin-film epitaxial ${S}r{T}i{O}_3$},
journal = {Physical review / B},
volume = {89},
number = {24},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2014-04651},
pages = {241401},
year = {2014},
abstract = {The equilibrium electrical conductivity of epitaxial SrTiO3
(STO) thin films was investigated as a function of
temperature, 950≤ T/K ≤1100, and oxygen partial
pressure, 10−23≤ pO2/bar ≤1. Compared with
single-crystal STO, nanoscale thin-film STO exhibited with
decreasing film thickness an increasingly enhanced
electronic conductivity under highly reducing conditions,
with a corresponding decrease in the activation enthalpy of
conduction. This implies substantial modification of STO's
point-defect thermodynamics for nanoscale film thicknesses.
We argue, however, against such a finite-size effect and for
an interface-proximity effect. Indeed, assuming trapping of
oxygen vacancies at the STO surface and concomitant
depletion of oxygen vacancies—and accumulation of
electrons—in an equilibrium surface space-charge layer, we
are able to predict quantitatively the conductivity as a
function of temperature, oxygen partial pressure, and film
thickness. Particularly complex behavior is predicted for
ultrathin films that are consumed entirely by space charge.},
cin = {PGI-7},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000336917700001},
doi = {10.1103/PhysRevB.89.241401},
url = {https://juser.fz-juelich.de/record/155485},
}