TY  - JOUR
AU  - Wenz, Tobias
AU  - Rosien, Marion
AU  - Haas, Fabian
AU  - Rieger, Torsten
AU  - Demarina, Nataliya
AU  - Lepsa, Mihail Ion
AU  - Lüth, Hans
AU  - Grützmacher, Detlev
AU  - Schäpers, Thomas
TI  - Phase coherent transport in hollow InAs nanowires
JO  - Applied physics letters
VL  - 105
IS  - 11
SN  - 1077-3118
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2014-04976
SP  - 113111 -
PY  - 2014
AB  - Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000342995800078
DO  - DOI:10.1063/1.4896286
UR  - https://juser.fz-juelich.de/record/156102
ER  -