Journal Article

FZJ-2014-04976

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Phase coherent transport in hollow InAs nanowires

Wenz, T. (Corresponding Author) ; Rosien, M. ; Haas, F.FZJ* ; Rieger, T.FZJ* ; Demarina, N.FZJ* ; Lepsa, M. I.FZJ* ; Lüth, H.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2014
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17339  doi:10.1063/1.4896286

Abstract: Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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