000156128 001__ 156128
000156128 005__ 20210129214212.0
000156128 0247_ $$2doi$$a10.1088/0957-4484/25/40/405701
000156128 0247_ $$2ISSN$$a1361-6528
000156128 0247_ $$2ISSN$$a0957-4484
000156128 0247_ $$2WOS$$aWOS:000342503800007
000156128 037__ $$aFZJ-2014-04991
000156128 082__ $$a530
000156128 1001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b0$$eCorresponding Author$$ufzj
000156128 245__ $$aCrystallization of $HfO_2$ in $InAs/HfO_2$ core–shell nanowires
000156128 260__ $$aBristol$$bIOP Publ.$$c2014
000156128 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1412598423_6125
000156128 3367_ $$2DataCite$$aOutput Types/Journal article
000156128 3367_ $$00$$2EndNote$$aJournal Article
000156128 3367_ $$2BibTeX$$aARTICLE
000156128 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000156128 3367_ $$2DRIVER$$aarticle
000156128 520__ $$aWe report the impact of deposition parameters on the structure of HfO2 covering InAs nanowires (NWs) being potential candidates for future field-effect transistors (FETs). Molecular beam epitaxial-grown Au-free InAs NWs were covered with HfO2 deposited by atomic-layer deposition. The impact of the film thickness as well as the deposition temperature on the occurrence and amount of crystalline HfO2 regions was investigated by high-resolution transmission electron microscopy (TEM) and x-ray diffraction. Compared to the deposition on planar Si substrates, the formation probability of crystalline HfO2 on InAs NWs is significantly enhanced. Here, even 3 nm thick films deposited at 250 °C are partly crystalline. Similarly, a low deposition temperature of 125 °C does not result in completely amorphous 10 nm thick HfO2 films, they contain monoclinic as well as orthorhombic HfO2 nanocrystals. Combining HfO2 and Al2O3 into a laminate structure is capable of suppressing the formation of crystalline HfO2 grains.
000156128 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000156128 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000156128 7001_ $$0P:(DE-HGF)0$$aJörres, Torsten$$b1
000156128 7001_ $$0P:(DE-HGF)0$$aVogel, J.$$b2
000156128 7001_ $$0P:(DE-HGF)0$$aBiermanns, A.$$b3
000156128 7001_ $$0P:(DE-HGF)0$$aPietsch, U.$$b4
000156128 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5$$ufzj
000156128 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b6$$ufzj
000156128 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/25/40/405701$$gVol. 25, no. 40, p. 405701 -$$n40$$p405701$$tNanotechnology$$v25$$x1361-6528$$y2014
000156128 8564_ $$uhttps://juser.fz-juelich.de/record/156128/files/FZJ-2014-04991.pdf$$yRestricted
000156128 909CO $$ooai:juser.fz-juelich.de:156128$$pVDB
000156128 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141766$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000156128 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000156128 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128603$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000156128 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000156128 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000156128 9141_ $$y2014
000156128 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000156128 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000156128 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000156128 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000156128 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000156128 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000156128 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000156128 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000156128 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000156128 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000156128 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000156128 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000156128 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000156128 980__ $$ajournal
000156128 980__ $$aVDB
000156128 980__ $$aI:(DE-Juel1)PGI-9-20110106
000156128 980__ $$aUNRESTRICTED