Journal Article

FZJ-2014-04991

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Crystallization of $HfO_2$ in $InAs/HfO_2$ core–shell nanowires

Rieger, T. (Corresponding Author)FZJ* ; Jörres, T. ; Vogel, J. ; Biermanns, A. ; Pietsch, U. ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2014
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/25/40/405701

Abstract: We report the impact of deposition parameters on the structure of HfO2 covering InAs nanowires (NWs) being potential candidates for future field-effect transistors (FETs). Molecular beam epitaxial-grown Au-free InAs NWs were covered with HfO2 deposited by atomic-layer deposition. The impact of the film thickness as well as the deposition temperature on the occurrence and amount of crystalline HfO2 regions was investigated by high-resolution transmission electron microscopy (TEM) and x-ray diffraction. Compared to the deposition on planar Si substrates, the formation probability of crystalline HfO2 on InAs NWs is significantly enhanced. Here, even 3 nm thick films deposited at 250 °C are partly crystalline. Similarly, a low deposition temperature of 125 °C does not result in completely amorphous 10 nm thick HfO2 films, they contain monoclinic as well as orthorhombic HfO2 nanocrystals. Combining HfO2 and Al2O3 into a laminate structure is capable of suppressing the formation of crystalline HfO2 grains.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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