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| Home > Publications database > Crystallization of $HfO_2$ in $InAs/HfO_2$ core–shell nanowires > print |
| 001 | 156128 | ||
| 005 | 20210129214212.0 | ||
| 024 | 7 | _ | |a 10.1088/0957-4484/25/40/405701 |2 doi |
| 024 | 7 | _ | |a 1361-6528 |2 ISSN |
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| 024 | 7 | _ | |a WOS:000342503800007 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-04991 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Crystallization of $HfO_2$ in $InAs/HfO_2$ core–shell nanowires |
| 260 | _ | _ | |a Bristol |c 2014 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1412598423_6125 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a We report the impact of deposition parameters on the structure of HfO2 covering InAs nanowires (NWs) being potential candidates for future field-effect transistors (FETs). Molecular beam epitaxial-grown Au-free InAs NWs were covered with HfO2 deposited by atomic-layer deposition. The impact of the film thickness as well as the deposition temperature on the occurrence and amount of crystalline HfO2 regions was investigated by high-resolution transmission electron microscopy (TEM) and x-ray diffraction. Compared to the deposition on planar Si substrates, the formation probability of crystalline HfO2 on InAs NWs is significantly enhanced. Here, even 3 nm thick films deposited at 250 °C are partly crystalline. Similarly, a low deposition temperature of 125 °C does not result in completely amorphous 10 nm thick HfO2 films, they contain monoclinic as well as orthorhombic HfO2 nanocrystals. Combining HfO2 and Al2O3 into a laminate structure is capable of suppressing the formation of crystalline HfO2 grains. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Jörres, Torsten |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Vogel, J. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Biermanns, A. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Pietsch, U. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 5 |u fzj |
| 700 | 1 | _ | |a Lepsa, Mihail Ion |0 P:(DE-Juel1)128603 |b 6 |u fzj |
| 773 | _ | _ | |a 10.1088/0957-4484/25/40/405701 |g Vol. 25, no. 40, p. 405701 - |0 PERI:(DE-600)1362365-5 |n 40 |p 405701 |t Nanotechnology |v 25 |y 2014 |x 1361-6528 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/156128/files/FZJ-2014-04991.pdf |y Restricted |
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