Journal Article

PreJuSER-15801

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

Hrauda, N. ; Zhang, J. ; Wintersberger, E. ; Etzelstorfer, T. ; Mandl, B. ; Stangl, J. ; Carbone, D. ; Holý, V. ; Jovanovic, V. ; Biasotto, C. ; Nanver, L. K. ; Moers, J.FZJ* ; Grützmacher, D.FZJ* ; Bauer, G.

2011
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl2013289

Abstract: For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.

Keyword(s): Germanium: chemistry (MeSH) ; Nanotechnology (MeSH) ; Particle Size (MeSH) ; Quantum Dots (MeSH) ; Semiconductors (MeSH) ; Silicon: chemistry (MeSH) ; Surface Properties (MeSH) ; Transistors, Electronic (MeSH) ; X-Rays (MeSH) ; Silicon ; Germanium ; J ; X-ray nanodiffraction (auto) ; semiconductor nanostructures (auto) ; structural investigations (auto) ; finite element simulations (auto) ; ordered island growth (auto) ; silicon germanium (auto)

Note: The authors thank the entire crew at ID01 for their excellent support, Martin Arndt for SEM sample preparation, and Philippe Caroff for fruitful discussions and help with the manuscript. This work was supported by the EC d-DOTFET project (012150-2) and the FWF Vienna (SFB025 IR-On).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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