Journal Article

PreJuSER-15879

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.FZJ* ; Zhang, B.FZJ* ; Zhao, Q. T.FZJ* ; Hartmann, J. M. ; Buca, D.FZJ* ; Nichau, A.FZJ* ; Lupták, R.FZJ* ; Lopes, J. M.FZJ* ; Lenk, S.FZJ* ; Luysberg, M. ; Bourdelle, K. K. ; Wang, X. ; Mantl, S.FZJ*

2011
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2011.03.002

Abstract: Strained SiGe quantum well p-MOSFETs with LaLuO3 higher-k dielectric were fabricated and characterized. The strained Si/strained Si0.5Ge0.5/strained SOI heterostructure transistors showed good output and transfer characteristics with an I-on/I-off ratio of 10(5). The extracted hole mobility shows an enhancement of about 2.5 times over Si universal hole mobility and no degradation compared to HfO2 or even SiO2 gate dielectric devices. (C) 2011 Elsevier Ltd. All rights reserved.

Keyword(s): J ; High-k (auto) ; HfO2 (auto) ; LaLuO3 (auto) ; SiGe (auto) ; Hole mobility (auto) ; Quantum well MOSFET (auto)

Note: This work was partially supported by the German Federal Ministry of Education and Research (13N9882) and the French Ministry of Industry within the framework of the MEDEA+ DECISIF project (2T 104). B. Zhang thanks the Shanghai Foundation for Development of Science and Technology (Grant No. 08520740100) and, together with W. Yu to the China Scholarship Council for financial support.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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