Journal Article

PreJuSER-15905

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png LaScO3 as higher-k dielectric for p-MOSFETs

Durgun Özben, E.FZJ* ; Schnee, M.FZJ* ; Nichau, A.FZJ* ; Mussmann, V.FZJ* ; Lupták, R.FZJ* ; Lopes, J. M. J.FZJ* ; Lenk, S.FZJ* ; Bourdelle, K. K. ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ*

2011
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2011.03.048

Abstract: The electrical properties of MOS capacitors with LaScO3 thin films grown by molecular beam deposition (MBD) have been studied with and without post deposition annealing (PDA) in 02 environment followed by forming gas. An EOT of 0.65 nm could be achieved for samples without PDA. However, the films suffer from large hysteresis and interface trap density. Applying PDA reduces the hysteresis, the D-it (down to the mid of 10(11) (eV cm(2))(-1)) and the leakage current by two orders of magnitude (down to the range of 10(-4)A/cm(2)) for an EOT of 1.1 nm. Furthermore we have successfully integrated LaScO3 into FD MOSFETs on SOI substrates. The p-FETs with LaScO3 show excellent characteristics with a steep subthreshold slope down to 65 mV/dec and hole mobilities comparable to HfO2 and HfSiON. (C) 2011 Elsevier B.V. All rights reserved.

Keyword(s): J ; CMOS-transistor (auto) ; High-kappa materials (auto) ; SOI (auto) ; Mobility (auto) ; LaScO3 (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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