TY  - JOUR
AU  - Lehmann, J.
AU  - Shevchenko, N.
AU  - Mücklich, A.
AU  - Borany, J.V.
AU  - Skorupa, W.
AU  - Schubert, J.
AU  - Lopes, J.M.J.
AU  - Mantl, S.
TI  - Millisecond flash-lamp annealing of LaLuO3
JO  - Microelectronic engineering
VL  - 88
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-15907
SP  - 1346 - 1348
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - Metal-oxide-semiconductor capacitors containing the alternative high-k dielectric LaLuO3 were treated by flash lamp annealing (FLA). Capacitance-voltage (C-V) and current-voltage (J-V) characteristics reveal an increase in the capacitance for the flashed samples while the very low leakage current of the LaLuO3 is retained. Microstructural investigations confirm the thermal stability of the film even after FLA at 1200 degrees C, 20 ms. (C) 2011 Published by Elsevier B.V.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000292572700077
DO  - DOI:10.1016/j.mee.2011.03.126
UR  - https://juser.fz-juelich.de/record/15907
ER  -