Journal Article

PreJuSER-15907

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Millisecond flash-lamp annealing of LaLuO3

Lehmann, J. ; Shevchenko, N. ; Mücklich, A. ; Borany, J. V. ; Skorupa, W. ; Schubert, J.FZJ* ; Lopes, J. M. J.FZJ* ; Mantl, S.FZJ*

2011
Elsevier [S.l.] @

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.mee.2011.03.126

Abstract: Metal-oxide-semiconductor capacitors containing the alternative high-k dielectric LaLuO3 were treated by flash lamp annealing (FLA). Capacitance-voltage (C-V) and current-voltage (J-V) characteristics reveal an increase in the capacitance for the flashed samples while the very low leakage current of the LaLuO3 is retained. Microstructural investigations confirm the thermal stability of the film even after FLA at 1200 degrees C, 20 ms. (C) 2011 Published by Elsevier B.V.

Keyword(s): J ; High-k dielectrics (auto) ; Alternative high-k dielectrics (auto) ; Higher-k dielectrics (auto) ; Ternary rare earth oxides (auto) ; Ternary high-k oxides (auto) ; Rare-earth based gate oxides (auto) ; Electrical properties (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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