% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Lehmann:15907, author = {Lehmann, J. and Shevchenko, N. and Mücklich, A. and Borany, J.V. and Skorupa, W. and Schubert, J. and Lopes, J.M.J. and Mantl, S.}, title = {{M}illisecond flash-lamp annealing of {L}a{L}u{O}3}, journal = {Microelectronic engineering}, volume = {88}, issn = {0167-9317}, address = {[S.l.] @}, publisher = {Elsevier}, reportid = {PreJuSER-15907}, pages = {1346 - 1348}, year = {2011}, note = {Record converted from VDB: 12.11.2012}, abstract = {Metal-oxide-semiconductor capacitors containing the alternative high-k dielectric LaLuO3 were treated by flash lamp annealing (FLA). Capacitance-voltage (C-V) and current-voltage (J-V) characteristics reveal an increase in the capacitance for the flashed samples while the very low leakage current of the LaLuO3 is retained. Microstructural investigations confirm the thermal stability of the film even after FLA at 1200 degrees C, 20 ms. (C) 2011 Published by Elsevier B.V.}, keywords = {J (WoSType)}, cin = {PGI-9}, ddc = {620}, cid = {I:(DE-Juel1)PGI-9-20110106}, pnm = {Grundlagen für zukünftige Informationstechnologien}, pid = {G:(DE-Juel1)FUEK412}, shelfmark = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$ Nanotechnology / Optics / Physics, Applied}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000292572700077}, doi = {10.1016/j.mee.2011.03.126}, url = {https://juser.fz-juelich.de/record/15907}, }