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Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

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2011
IEEE New York, NY

IEEE photonics technology letters 23, 1189 - 1191 () [10.1109/LPT.2011.2157816]

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Abstract: We have fabricated and characterized ultrafast metal-semiconductor-metal (MSM) photodetectors integrated with metal-semiconductor-field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump-probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics.

Keyword(s): J ; Gallium nitride (GaN) (auto) ; metal-semiconductor-field-effect-transistor (MESFET) (auto) ; metal-semiconductor-metal photodetector (MSM PD) (auto) ; terahertz (THz) (auto)


Note: The work of S. Wu and J. Zhang was supported by the Frank Horton Graduate Fellowship Program at the University of Rochester Laboratory for Laser Energetics, funded by the U.S. Department of Energy Office of Inertial Confinement Fusion under Cooperative Agreement DE-FC52-08NA28302 and the New York State Energy Research and Development Authority. Work in Rochester was additionally supported in part by the National Science Foundation Grant 0901701.

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

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