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000016881 0247_ $$2DOI$$a10.1002/pip.1097
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000016881 084__ $$2WoS$$aEnergy & Fuels
000016881 084__ $$2WoS$$aPhysics, Applied
000016881 1001_ $$0P:(DE-Juel1)2402$$aSchulte, M.$$b0$$uFZJ
000016881 245__ $$aRay tracing for the optics at nano-textured ZnO–air and ZnO–silicon interfaces
000016881 260__ $$aChichester$$bWiley$$c2011
000016881 300__ $$a724 - 732
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000016881 440_0 $$022841$$aProgress in Photovoltaics: Research and Applications$$v19$$x1062-7995$$y6
000016881 500__ $$aThe authors thank Thomas Beckers and Reinhard Carius for the fruitful discussions and Carsten Rockstuhl for his cooperation. The authors also acknowledge financial support by the BMU (project number 0327625).
000016881 520__ $$aWe investigate the scattering behavior of nano-textured ZnO-Air and ZnO-Silicon interfaces for the application in thin film silicon solar cells. Contrary to the common approach, the numerical solution of the Maxwell's equations, we introduce a ray tracing approach based on geometric optics and the measured interface topography. The validity of this model is discussed by means of scanning near-field optical microscopy (SNOM) measurements and numerical solutions of the Maxwell's equations. We show, that the ray tracing model can qualitatively describe the formation of micro lenses, which are the dominant feature of the local scattering properties of the investigated interfaces. A quantitative analysis for the ZnO-Silicon interface at lambda = 488 and 780 nm shows that the ray tracing model corresponds well to the numerical solution of the Maxwell's equations, especially within the first 1.5 mu m distance from the interface. Direct correlations between the locally scattered intensity and the interface topographies are found. Copyright (C) 2011 John Wiley & Sons, Ltd.
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000016881 65320 $$2Author$$aray tracing
000016881 65320 $$2Author$$ainterface
000016881 65320 $$2Author$$alight scattering
000016881 65320 $$2Author$$aSNOM
000016881 65320 $$2Author$$aZnO
000016881 65320 $$2Author$$aTCO
000016881 65320 $$2Author$$alight trapping
000016881 65320 $$2Author$$aChandezon
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000016881 7001_ $$0P:(DE-Juel1)130219$$aBittkau, K.$$b1$$uFZJ
000016881 7001_ $$0P:(DE-Juel1)VDB86995$$aPieters, B. E.$$b2$$uFZJ
000016881 7001_ $$0P:(DE-Juel1)VDB74616$$aJorke, S.$$b3$$uFZJ
000016881 7001_ $$0P:(DE-Juel1)VDB5910$$aStiebig, H.$$b4$$uFZJ
000016881 7001_ $$0P:(DE-Juel1)130252$$aHüpkes, J.$$b5$$uFZJ
000016881 7001_ $$0P:(DE-Juel1)130285$$aRau, U.$$b6$$uFZJ
000016881 773__ $$0PERI:(DE-600)2023295-0$$a10.1002/pip.1097$$gVol. 19, p. 724 - 732$$p724 - 732$$q19<724 - 732$$tProgress in photovoltaics$$v19$$x1062-7995$$y2011
000016881 8567_ $$uhttp://dx.doi.org/10.1002/pip.1097
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000016881 9141_ $$y2011
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