000017056 001__ 17056
000017056 005__ 20180208224701.0
000017056 0247_ $$2DOI$$a10.1063/1.3657521
000017056 0247_ $$2WOS$$aWOS:000296659400045
000017056 0247_ $$2Handle$$a2128/7337
000017056 037__ $$aPreJuSER-17056
000017056 041__ $$aeng
000017056 082__ $$a530
000017056 084__ $$2WoS$$aPhysics, Applied
000017056 1001_ $$0P:(DE-HGF)0$$aYang, S.$$b0
000017056 245__ $$aCharacterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
000017056 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
000017056 300__ $$a182103
000017056 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000017056 3367_ $$2DataCite$$aOutput Types/Journal article
000017056 3367_ $$00$$2EndNote$$aJournal Article
000017056 3367_ $$2BibTeX$$aARTICLE
000017056 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000017056 3367_ $$2DRIVER$$aarticle
000017056 440_0 $$0562$$aApplied Physics Letters$$v99$$x0003-6951$$y18
000017056 500__ $$3POF3_Assignment on 2016-02-29
000017056 500__ $$aThis work is supported by Hong Kong Research Grant Council under 611610. The authors also thank Mr. J.J. Gu and Professor P.D. Ye from Purdue University for valuable information about LLO thin film.
000017056 520__ $$aWe report the study of high-dielectric-constant (high-kappa) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin (similar to 2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 +/- 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of similar to 28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1V compared to a conventional Ni-Au/III-nitride Schottky diode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657521]
000017056 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000017056 588__ $$aDataset connected to Web of Science
000017056 650_7 $$2WoSType$$aJ
000017056 7001_ $$0P:(DE-HGF)0$$aHuang, S.$$b1
000017056 7001_ $$0P:(DE-HGF)0$$aChen, H.$$b2
000017056 7001_ $$0P:(DE-Juel1)VDB93168$$aSchnee, M.$$b3$$uFZJ
000017056 7001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b4$$uFZJ
000017056 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b5$$uFZJ
000017056 7001_ $$0P:(DE-HGF)0$$aChen, K.J.$$b6
000017056 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3657521$$gVol. 99, p. 182103$$p182103$$q99<182103$$tApplied physics letters$$v99$$x0003-6951$$y2011
000017056 8567_ $$uhttp://dx.doi.org/10.1063/1.3657521
000017056 8564_ $$uhttps://juser.fz-juelich.de/record/17056/files/FZJ-17056.pdf$$yPublished under German "Allianz" Licensing conditions on 2011-11-01. Available in OpenAccess from 2011-11-01$$zPublished final document.
000017056 8564_ $$uhttps://juser.fz-juelich.de/record/17056/files/FZJ-17056.jpg?subformat=icon-1440$$xicon-1440
000017056 8564_ $$uhttps://juser.fz-juelich.de/record/17056/files/FZJ-17056.jpg?subformat=icon-180$$xicon-180
000017056 8564_ $$uhttps://juser.fz-juelich.de/record/17056/files/FZJ-17056.jpg?subformat=icon-640$$xicon-640
000017056 909CO $$ooai:juser.fz-juelich.de:17056$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000017056 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000017056 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000017056 915__ $$0StatID:(DE-HGF)0520$$2StatID$$aAllianz-OA
000017056 9141_ $$y2011
000017056 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000017056 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000017056 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000017056 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000017056 970__ $$aVDB:(DE-Juel1)131435
000017056 9801_ $$aFullTexts
000017056 980__ $$aVDB
000017056 980__ $$aConvertedRecord
000017056 980__ $$ajournal
000017056 980__ $$aI:(DE-82)080009_20140620
000017056 980__ $$aI:(DE-Juel1)PGI-9-20110106
000017056 980__ $$aUNRESTRICTED
000017056 980__ $$aJUWEL
000017056 980__ $$aFullTexts
000017056 981__ $$aI:(DE-Juel1)PGI-9-20110106
000017056 981__ $$aI:(DE-Juel1)VDB881