Journal Article

PreJuSER-17056

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Yang, S. ; Huang, S. ; Chen, H. ; Schnee, M.FZJ* ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Chen, K. J.

2011
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7337  doi:10.1063/1.3657521

Abstract: We report the study of high-dielectric-constant (high-kappa) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin (similar to 2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 +/- 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of similar to 28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1V compared to a conventional Ni-Au/III-nitride Schottky diode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657521]

Keyword(s): J

Note: This work is supported by Hong Kong Research Grant Council under 611610. The authors also thank Mr. J.J. Gu and Professor P.D. Ye from Purdue University for valuable information about LLO thin film.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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