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@ARTICLE{Yang:17056,
      author       = {Yang, S. and Huang, S. and Chen, H. and Schnee, M. and
                      Zhao, Q.T. and Schubert, J. and Chen, K.J.},
      title        = {{C}haracterization of high- {L}a{L}u{O}3 thin film grown on
                      {A}l{G}a{N}/{G}a{N} heterostructure by molecular beam
                      deposition},
      journal      = {Applied physics letters},
      volume       = {99},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-17056},
      pages        = {182103},
      year         = {2011},
      note         = {This work is supported by Hong Kong Research Grant Council
                      under 611610. The authors also thank Mr. J.J. Gu and
                      Professor P.D. Ye from Purdue University for valuable
                      information about LLO thin film.},
      abstract     = {We report the study of high-dielectric-constant
                      (high-kappa) dielectric LaLuO3 (LLO) thin film that is grown
                      on AlGaN/GaN heterostructure by molecular beam deposition
                      (MBD). The physical properties of LLO on AlGaN/GaN
                      heterostrucure have been investigated with atomic force
                      microscopy, x-ray photoelectron spectroscopy, and TEM. It is
                      revealed that the MBD-grown 16 nm-thick LLO film is
                      polycrystalline with a thin (similar to 2 nm) amorphous
                      transition layer at the LLO/GaN interface. The bandgap of
                      LLO is derived as 5.3 +/- 0.04 eV from O1s energy loss
                      spectrum. Capacitance-voltage (C-V) characteristics of a
                      Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode
                      exhibit small frequency dispersion $(<2\%)$ and reveal a
                      high effective dielectric constant of similar to 28 for the
                      LLO film. The LLO layer is shown to be effective in
                      suppressing the reverse and forward leakage current in the
                      MIS diode. In particular, the MIS diode forward current is
                      reduced by 7 orders of magnitude at a forward bias of 1V
                      compared to a conventional Ni-Au/III-nitride Schottky diode.
                      (C) 2011 American Institute of Physics. [doi:
                      10.1063/1.3657521]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000296659400045},
      doi          = {10.1063/1.3657521},
      url          = {https://juser.fz-juelich.de/record/17056},
}