Hauptseite > Publikationsdatenbank > CMOS Imager With 1024 SPADs and TDCs for Single-Photon Timing and 3-D Time-of-Flight > print |
001 | 171759 | ||
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024 | 7 | _ | |a 10.1109/JSTQE.2014.2342197 |2 doi |
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041 | _ | _ | |a English |
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100 | 1 | _ | |a Villa, Federica |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
245 | _ | _ | |a CMOS Imager With 1024 SPADs and TDCs for Single-Photon Timing and 3-D Time-of-Flight |
260 | _ | _ | |a New York, NY |c 2014 |b IEEE |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1421066485_25619 |2 PUB:(DE-HGF) |
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336 | 7 | _ | |a article |2 DRIVER |
520 | _ | _ | |a We present a CMOS imager consisting of 32 × 32 smart pixels, each one able to detect single photons in the 300 – 900 nm wavelength range and to perform both photon-counting and photon-timing operations on very fast optical events with faint intensities. In photon-counting mode, the imager provides photonnumber (i.e., intensity) resolvedmovies of the scene under observation, up to 100 000 frames/s. In photon-timing, the imager provides photon arrival times with 312 ps resolution. The result are videos with either time-resolved (e.g., fluorescence) maps of a sample, or 3-D depth-resolvedmaps of a target scene. The imager is fabricated in a cost-effective 0.35-μmCMOStechnology, automotive certified. Each pixel consists of a single-photon avalanche diode with 30 μm photoactive diameter, coupled to an in-pixel 10-bit time-to-digital converter with 320-ns full-scale range, an INL of 10% LSB and a DNL of 2% LSB. The chip operates in global shutter mode, with full frame times down to 10 μs and just 1-ns conversion time. The reconfigurable imager design enables a broad set of applications, like time-resolved spectroscopy, fluorescence lifetime imaging, diffusive optical tomography, molecular imaging, time-of-flight 3-D ranging and atmospheric layer sensing through LIDAR. |
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700 | 1 | _ | |a Tosi, Alberto |0 P:(DE-HGF)0 |b 4 |
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700 | 1 | _ | |a Dalla Mora, Alberto |0 P:(DE-HGF)0 |b 6 |
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773 | _ | _ | |a 10.1109/JSTQE.2014.2342197 |g Vol. 20, no. 6, p. 1 - 10 |0 PERI:(DE-600)2025385-0 |n 6 |p 1 - 10 |t IEEE journal of selected topics in quantum electronics |v 20 |y 2014 |x 1558-4542 |
856 | 4 | _ | |u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6862847 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/171759/files/FZJ-2014-05325.pdf |y Restricted |
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