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@ARTICLE{Eich:171765,
      author       = {Eich, A. and Michiardi, M. and Bihlmayer, G. and Zhu, X.-G.
                      and Mi, J.-L. and Iversen, Bo B. and Wiesendanger, R. and
                      Hofmann, Ph. and Khajetoorians, A. A. and Wiebe, J.},
      title        = {{I}ntra- and interband electron scattering in a hybrid
                      topological insulator: {B}ismuth bilayer on
                      {B}i$_{2}${S}e$_{3}$},
      journal      = {Physical review / B},
      volume       = {90},
      number       = {15},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2014-05330},
      pages        = {155414},
      year         = {2014},
      abstract     = {The band structure and intra- and interband scattering
                      processes of the electrons at the surface of a bismuth
                      bilayer on Bi2Se3 have been experimentally investigated by
                      low-temperature Fourier-transform scanning tunneling
                      spectroscopy. The observed complex quasiparticle
                      interference patterns are compared to a simulation based on
                      the spin-dependent joint density of states approach using
                      the surface-localized spectral function calculated from
                      first principles as the only input. Thereby, the origin of
                      the quasiparticle interferences can be traced back to
                      intraband scattering in the bismuth-bilayer valence band and
                      Bi2Se3 conduction band and to interband scattering between
                      the two-dimensional topological state and the
                      bismuth-bilayer valence band. The investigation reveals that
                      the bilayer band gap, which is predicted to host
                      one-dimensional topological states at the edges of the
                      bilayer, is pushed several hundred meV above the Fermi
                      level. This result is rationalized by an electron transfer
                      from the bilayer to Bi2Se3 which also leads to a
                      two-dimensional electron state in the Bi2Se3 conduction band
                      with a strong Rashba spin splitting, coexisting with the
                      topological state and bilayer valence band},
      cin          = {IAS-1 / PGI-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000344023500006},
      doi          = {10.1103/PhysRevB.90.155414},
      url          = {https://juser.fz-juelich.de/record/171765},
}