Intra- and interband electron scattering in a hybrid topological insulator: Bismuth bilayer on Bi$_{2}$Se$_{3}$

Eich, A.; Wiesendanger, R.; Zhu, X.-G.; Mi, J.-L.; Bihlmayer, G.; Wiebe, J.; Khajetoorians, A. A.; Iversen, Bo B.; Hofmann, Ph.; Michiardi, M.

doi:10.1103/PhysRevB.90.155414

Journal Article

FZJ-2014-05330

Intra- and interband electron scattering in a hybrid topological insulator: Bismuth bilayer on Bi$_{2}$Se$_{3}$

Eich, A. ; Michiardi, M. ; Bihlmayer, G.FZJ* ; Zhu, X.-G. ; Mi, J.-L. ; Iversen, B. B. ; Wiesendanger, R. ; Hofmann, P. ; Khajetoorians, A. A. ; Wiebe, J. (Corresponding Author)

2014
APS College Park, Md.

Physical review / B 90(15), 155414 (2014) [10.1103/PhysRevB.90.155414]

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Please use a persistent id in citations: http://hdl.handle.net/2128/8069 doi:10.1103/PhysRevB.90.155414

Abstract: The band structure and intra- and interband scattering processes of the electrons at the surface of a bismuth bilayer on Bi2Se3 have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth-bilayer valence band and Bi2Se3 conduction band and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred meV above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi2Se3 which also leads to a two-dimensional electron state in the Bi2Se3 conduction band with a strong Rashba spin splitting, coexisting with the topological state and bilayer valence band

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