%0 Journal Article
%A Ding, Kaining
%A Aeberhard, Urs
%A Smirnov, Vladimir
%A Holländer, Bernhard
%A Finger, Friedhelm
%A Rau, Uwe
%T Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells
%J Japanese journal of applied physics
%V 52
%N 12R
%@ 1347-4065
%C Bristol
%I IOP Publ.
%M FZJ-2014-05554
%P 122304 
%D 2013
%X This paper reports on the development of phosphorous doped microcrystalline silicon oxide (µc-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type µc-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm2 for flat cells was attributed to the low optical losses in the emitter window. 
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000331427600012
%R 10.7567/JJAP.52.122304
%U https://juser.fz-juelich.de/record/172000