Journal Article

FZJ-2014-05554

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells

Ding, K. (Corresponding Author)FZJ* ; Aeberhard, U.FZJ* ; Smirnov, V.FZJ* ; Holländer, B.FZJ* ; Finger, F.FZJ* ; Rau, U.FZJ*

2013
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: doi:10.7567/JJAP.52.122304

Abstract: This paper reports on the development of phosphorous doped microcrystalline silicon oxide (µc-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type µc-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm2 for flat cells was attributed to the low optical losses in the emitter window.

---

Contributing Institute(s):

1. Photovoltaik (IEK-5)
2. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 111 - Thin Film Photovoltaics (POF2-111) (POF2-111)

Appears in the scientific report 2014

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---