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000172000 1001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b0$$eCorresponding Author
000172000 245__ $$aWide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells
000172000 260__ $$aBristol$$bIOP Publ.$$c2013
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000172000 520__ $$aThis paper reports on the development of phosphorous doped microcrystalline silicon oxide (µc-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type µc-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm2 for flat cells was attributed to the low optical losses in the emitter window. 
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000172000 7001_ $$0P:(DE-Juel1)130210$$aAeberhard, Urs$$b1
000172000 7001_ $$0P:(DE-Juel1)130297$$aSmirnov, Vladimir$$b2
000172000 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b3$$ufzj
000172000 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b4
000172000 7001_ $$0P:(DE-Juel1)143905$$aRau, Uwe$$b5
000172000 773__ $$0PERI:(DE-600)2006801-3$$a10.7567/JJAP.52.122304$$gVol. 52, no. 12R, p. 122304 -$$n12R$$p122304 $$tJapanese journal of applied physics$$v52$$x1347-4065$$y2013
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