TY  - JOUR
AU  - Ding, Kaining
AU  - Aeberhard, Urs
AU  - Smirnov, Vladimir
AU  - Holländer, Bernhard
AU  - Finger, Friedhelm
AU  - Rau, Uwe
TI  - Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells
JO  - Japanese journal of applied physics
VL  - 52
IS  - 12R
SN  - 1347-4065
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2014-05554
SP  - 122304 
PY  - 2013
AB  - This paper reports on the development of phosphorous doped microcrystalline silicon oxide (µc-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type µc-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm2 for flat cells was attributed to the low optical losses in the emitter window. 
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000331427600012
DO  - DOI:10.7567/JJAP.52.122304
UR  - https://juser.fz-juelich.de/record/172000
ER  -