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@ARTICLE{Ding:172000,
author = {Ding, Kaining and Aeberhard, Urs and Smirnov, Vladimir and
Holländer, Bernhard and Finger, Friedhelm and Rau, Uwe},
title = {{W}ide {G}ap {M}icrocrystalline {S}ilicon {O}xide {E}mitter
for a-{S}i{O} $_{x}$ :{H}/c-{S}i {H}eterojunction {S}olar
{C}ells},
journal = {Japanese journal of applied physics},
volume = {52},
number = {12R},
issn = {1347-4065},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2014-05554},
pages = {122304},
year = {2013},
abstract = {This paper reports on the development of phosphorous doped
microcrystalline silicon oxide (µc-SiOx:H) films as an
emitter window layer in flat p-type silicon heterojunction
(SHJ) solar cells featuring intrinsic a-SiOx:H buffer
layers. We investigated the material properties of n-type
µc-SiOx:H films grown at various input gas ratios and
correlated the results of SHJ solar cells utilizing varying
oxygen content and thickness of the emitter layer to the
corresponding film properties. A maximum efficiency of
$19.0\%$ was achieved. The excellent short circuit current
of 35.8 mA/cm2 for flat cells was attributed to the low
optical losses in the emitter window.},
cin = {IEK-5 / PGI-9},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)PGI-9-20110106},
pnm = {111 - Thin Film Photovoltaics (POF2-111)},
pid = {G:(DE-HGF)POF2-111},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000331427600012},
doi = {10.7567/JJAP.52.122304},
url = {https://juser.fz-juelich.de/record/172000},
}