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| Home > Publications database > Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells > print |
| 001 | 172000 | ||
| 005 | 20240712084534.0 | ||
| 024 | 7 | _ | |a 10.7567/JJAP.52.122304 |2 doi |
| 024 | 7 | _ | |a 0021-4922 |2 ISSN |
| 024 | 7 | _ | |a 1347-4065 |2 ISSN |
| 024 | 7 | _ | |a WOS:000331427600012 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-05554 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells |
| 260 | _ | _ | |a Bristol |c 2013 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1415686958_4053 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a This paper reports on the development of phosphorous doped microcrystalline silicon oxide (µc-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type µc-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm2 for flat cells was attributed to the low optical losses in the emitter window. |
| 536 | _ | _ | |a 111 - Thin Film Photovoltaics (POF2-111) |0 G:(DE-HGF)POF2-111 |c POF2-111 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Aeberhard, Urs |0 P:(DE-Juel1)130210 |b 1 |
| 700 | 1 | _ | |a Smirnov, Vladimir |0 P:(DE-Juel1)130297 |b 2 |
| 700 | 1 | _ | |a Holländer, Bernhard |0 P:(DE-Juel1)125595 |b 3 |u fzj |
| 700 | 1 | _ | |a Finger, Friedhelm |0 P:(DE-Juel1)130238 |b 4 |
| 700 | 1 | _ | |a Rau, Uwe |0 P:(DE-Juel1)143905 |b 5 |
| 773 | _ | _ | |a 10.7567/JJAP.52.122304 |g Vol. 52, no. 12R, p. 122304 - |0 PERI:(DE-600)2006801-3 |n 12R |p 122304 |t Japanese journal of applied physics |v 52 |y 2013 |x 1347-4065 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/172000/files/FZJ-2014-05554.pdf |y Restricted |
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| 913 | 2 | _ | |a DE-HGF |b POF III |l Forschungsbereich Energie |1 G:(DE-HGF)POF3-120 |0 G:(DE-HGF)POF3-121 |2 G:(DE-HGF)POF3-100 |v Erneuerbare Energien |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Energie |l Erneuerbare Energien |1 G:(DE-HGF)POF2-110 |0 G:(DE-HGF)POF2-111 |2 G:(DE-HGF)POF2-100 |v Thin Film Photovoltaics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |
| 914 | 1 | _ | |y 2014 |
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