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000172016 1001_ $$0P:(DE-Juel1)141652$$aMichard, S.$$b0
000172016 245__ $$aInvestigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates
000172016 260__ $$aOttawa, Ontario$$bNRC Research Press$$c2014
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000172016 520__ $$aThe effects of postdeposition air exposure of microcrystalline silicon films, prepared at varied deposition rates, are investigated. The changes in the oxygen content, evaluated from Fourier transform infrared spectroscopy measurements, were studied over a period of time after deposition (up to 180 days) depending on deposition rate and Raman intensity ratio. Two types of behavior were identified: in the case of highly crystalline samples, an oxygen uptake increases with increasing Raman intensity ratio; while less crystalline samples were found to be more stable against oxygen incorporation. These observations are related to the film microstructure and porosity and are linked to the variations in Raman intensity ratio and growth rate of microcrystalline silicon films.
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000172016 7001_ $$0P:(DE-Juel1)130830$$aMeier, Matthias$$b1$$eCorresponding Author
000172016 7001_ $$0P:(DE-Juel1)130309$$aZastrow, U.$$b2
000172016 7001_ $$0P:(DE-Juel1)130212$$aAstakhov, O.$$b3
000172016 7001_ $$0P:(DE-Juel1)130238$$aFinger, F.$$b4
000172016 773__ $$0PERI:(DE-600)2021497-2$$a10.1139/cjp-2013-0636$$gVol. 92, no. 7/8, p. 774 - 777$$n7/8$$p774 - 777$$tCanadian journal of physics$$v92$$x1208-6045$$y2014
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