Journal Article

FZJ-2014-05565

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates

Michard, S.FZJ* ; Meier, M. (Corresponding Author)FZJ* ; Zastrow, U.FZJ* ; Astakhov, O.FZJ* ; Finger, F.FZJ*

2014
NRC Research Press Ottawa, Ontario

This record in other databases:    

Please use a persistent id in citations: doi:10.1139/cjp-2013-0636

Abstract: The effects of postdeposition air exposure of microcrystalline silicon films, prepared at varied deposition rates, are investigated. The changes in the oxygen content, evaluated from Fourier transform infrared spectroscopy measurements, were studied over a period of time after deposition (up to 180 days) depending on deposition rate and Raman intensity ratio. Two types of behavior were identified: in the case of highly crystalline samples, an oxygen uptake increases with increasing Raman intensity ratio; while less crystalline samples were found to be more stable against oxygen incorporation. These observations are related to the film microstructure and porosity and are linked to the variations in Raman intensity ratio and growth rate of microcrystalline silicon films.

---

Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 111 - Thin Film Photovoltaics (POF2-111) (POF2-111)

Appears in the scientific report 2014

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---