TY  - JOUR
AU  - Michard, S.
AU  - Meier, Matthias
AU  - Zastrow, U.
AU  - Astakhov, O.
AU  - Finger, F.
TI  - Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates
JO  - Canadian journal of physics
VL  - 92
IS  - 7/8
SN  - 1208-6045
CY  - Ottawa, Ontario
PB  - NRC Research Press
M1  - FZJ-2014-05565
SP  - 774 - 777
PY  - 2014
AB  - The effects of postdeposition air exposure of microcrystalline silicon films, prepared at varied deposition rates, are investigated. The changes in the oxygen content, evaluated from Fourier transform infrared spectroscopy measurements, were studied over a period of time after deposition (up to 180 days) depending on deposition rate and Raman intensity ratio. Two types of behavior were identified: in the case of highly crystalline samples, an oxygen uptake increases with increasing Raman intensity ratio; while less crystalline samples were found to be more stable against oxygen incorporation. These observations are related to the film microstructure and porosity and are linked to the variations in Raman intensity ratio and growth rate of microcrystalline silicon films.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000339379500049
DO  - DOI:10.1139/cjp-2013-0636
UR  - https://juser.fz-juelich.de/record/172016
ER  -