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@ARTICLE{Michard:172016,
author = {Michard, S. and Meier, Matthias and Zastrow, U. and
Astakhov, O. and Finger, F.},
title = {{I}nvestigation of porosity and atmospheric gas diffusion
in microcrystalline silicon fabricated at high growth rates},
journal = {Canadian journal of physics},
volume = {92},
number = {7/8},
issn = {1208-6045},
address = {Ottawa, Ontario},
publisher = {NRC Research Press},
reportid = {FZJ-2014-05565},
pages = {774 - 777},
year = {2014},
abstract = {The effects of postdeposition air exposure of
microcrystalline silicon films, prepared at varied
deposition rates, are investigated. The changes in the
oxygen content, evaluated from Fourier transform infrared
spectroscopy measurements, were studied over a period of
time after deposition (up to 180 days) depending on
deposition rate and Raman intensity ratio. Two types of
behavior were identified: in the case of highly crystalline
samples, an oxygen uptake increases with increasing Raman
intensity ratio; while less crystalline samples were found
to be more stable against oxygen incorporation. These
observations are related to the film microstructure and
porosity and are linked to the variations in Raman intensity
ratio and growth rate of microcrystalline silicon films.},
cin = {IEK-5},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {111 - Thin Film Photovoltaics (POF2-111)},
pid = {G:(DE-HGF)POF2-111},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000339379500049},
doi = {10.1139/cjp-2013-0636},
url = {https://juser.fz-juelich.de/record/172016},
}