Journal Article

PreJuSER-17263

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q. T.FZJ* ; Hartmann, J. M. ; Mantl, S.FZJ*

2011
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2011.2163696

Abstract: We report on experimental and simulated results of tunneling field-effect transistors (TFETs) with a Si channel and a strained Si1-xGex source. The fabricated TFET with a tensile strained Si channel shows comparably large on-currents and a subthreshold slope of 80 mV/dec at 300 K for a drain current range of three orders of magnitude. A novel TFET structure is proposed to enhance the on-currents by using a buried Si1-xGex source. The overlap between the top thin Si channel and the buried SiGe source increases the tunneling area. Simulations indicate that this structure significantly improves the performance.

Keyword(s): J ; SiGe (auto) ; strained Si (sSi) (auto) ; subthreshold swing (SS) (auto) ; tunneling field-effect transistors (TFETs) (auto)

Note: This work was supported by the European project STEEPER. The review of this letter was arranged by Editor J. Cai.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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